{"id":18365,"date":"2019-11-21T02:52:33","date_gmt":"2019-11-21T02:52:33","guid":{"rendered":"https:\/\/www.meetyoucarbide.com\/?p=13832"},"modified":"2020-05-07T02:41:01","modified_gmt":"2020-05-07T02:41:01","slug":"application-of-grain-growth-inhibitors-in-cemented-carbide","status":"publish","type":"post","link":"https:\/\/www.meetyoucarbide.com\/pl\/application-of-grain-growth-inhibitors-in-cemented-carbide\/","title":{"rendered":"Zastosowanie inhibitor\u00f3w wzrostu ziarna w w\u0119gliku spiekanym"},"content":{"rendered":"
When WC grains in cemented carbide are less than 0.5 \u03bc m, the finer the grains are, the fewer the defects are, and the higher the bending strength and hardness are The particle size of WC powder used to produce ultrafine cemented carbide is much smaller than that of WC powder used in general cemented carbide. The WC powder has high activity and is easy to cause grain growth in the sintering process, which is one of the crack sources.<\/p>\n\n\n\n
At present, there are two main methods to control the grain size:<\/p>\n\n\n\n
First, a new sintering process is adopted. The results show that the densification of dozens of nano WC Co composite powders can be completed after sintering at 1400 \u2103 for 30s, and the grain size is 0.2 \u03bc m, but if the sintering time is extended to 60s, the grain size will grow rapidly to 2.0 \u03bc M. The new sintering processes that can be used for nano WC Co cemented carbide composite powder mainly include microwave sintering, hot isostatic pressing sintering, discharge plasma sintering and two-stage sintering.<\/p>\n\n\n\n
Second, adding inhibitors of grain growth to inhibit grain growth, VC, TAC and Cr3C2 are often used inhibitors.<\/p>\n\n\n\n
In this paper, the inhibition mechanism, the factors affecting the effect of inhibitors, the way of adding inhibitors, the commonly used inhibitors, the development of the latest inhibitors and the influence of inhibitors on the comprehensive properties of alloys are introduced.<\/p>\n\n\n\n